Indium nitride

Indium nitride
Names
	Other names Indium(III) nitride
Identifiers
CAS Number	25617-98-5 ;
3D model (JSmol)	Interactive image; Interactive image;
ChemSpider	105058 ;
ECHA InfoCard	100.042.831
PubChem CID	117560;
UNII	D66UAC005A ;
CompTox Dashboard (EPA)	DTXSID7067112 ;
	InChI InChI=1S/In.N Key: NWAIGJYBQQYSPW-UHFFFAOYSA-N ; InChI=1/In.N/rInN/c1-2 Key: NWAIGJYBQQYSPW-QCNKTVRGAR;
	SMILES [In+3].[N-3]; [In]#N;
Properties
Chemical formula	InN
Molar mass	128.83 g/mol
Appearance	black powder
Density	6.81 g/cm3
Melting point	1,100 °C (2,010 °F; 1,370 K)
Solubility in water	hydrolysis
Band gap	0.65 eV (300 K)
Electron mobility	3200 cm2/(V.s) (300 K)
Thermal conductivity	45 W/(m.K) (300 K)
Refractive index (nD)	2.9
Structure
Crystal structure	Wurtzite (hexagonal)
Space group	C46v-P63mc
Lattice constant	a = 354.5 pm, c = 570.3 pm
Coordination geometry	Tetrahedral
Hazards
	Occupational safety and health (OHS/OSH):
Main hazards	Irritant, hydrolysis to ammonia
Safety data sheet (SDS)	External SDS
Related compounds
Other anions	Indium phosphide; Indium arsenide; Indium antimonide
Other cations	Boron nitride; Aluminium nitride; Gallium nitride
Related compounds	Indium gallium nitride; Indium gallium aluminium nitride
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). verify (what is ?) Infobox references

Indium nitride (In N) is a small bandgap semiconductor material which has potential application in solar cells^[2] and high speed electronics.^[3]^[4]

The bandgap of InN has now been established as ~0.7 eV depending on temperature^[5] (the obsolete value is 1.97 eV). The effective electron mass has been recently determined by high magnetic field measurements,^[6]^[7] m* =0.055 m₀.

Alloyed with GaN, the ternary system InGaN has a direct bandgap span from the infrared (0.69 eV) to the ultraviolet (3.4 eV).

Currently there is research into developing solar cells using the nitride based semiconductors. Using one or more alloys of indium gallium nitride (InGaN), an optical match to the solar spectrum can be achieved.^{[citation needed]} The bandgap of InN allows a wavelengths as long as 1900 nm to be utilized. However, there are many difficulties to be overcome if such solar cells are to become a commercial reality: p-type doping of InN and indium-rich InGaN is one of the biggest challenges. Heteroepitaxial growth of InN with other nitrides (GaN, AlN) has proved to be difficult.

Thin layers of InN can be grown using metalorganic chemical vapour deposition (MOCVD).^[8]

^ Pichugin, I. G.; Tlachala, M. (1978). "Rentgenovsky analiz nitrida indiya" Рентгеновский анализ нитрида индия [X-ray analysis of indium nitride]. Izvestiya Akademii Nauk SSSR: Neorganicheskie Materialy Известия Академии наук СССР: Неорганические материалы (in Russian). 14 (1): 175–176.
^ Nanishi, Y.; Araki, T.; Yamaguchi, T. (2010). "Molecular-beam epitaxy of InN". In Veal, T. D.; McConville, C. F.; Schaff, W. J. (eds.). Indium Nitride and Related Alloys. CRC Press. p. 31. ISBN 978-1-138-11672-6.
^ Yim, J. W. L.; Wu, J. (2010). "Optical properties of InN and related alloys". In Veal, T. D.; McConville, C. F.; Schaff, W. J. (eds.). Indium Nitride and Related Alloys. CRC Press. p. 266. ISBN 978-1-138-11672-6.
^ Christen, Jürgen; Gil, Bernard (2014). "Group III nitrides". Physica Status Solidi C. 11 (2): 238. Bibcode:2014PSSCR..11..238C. doi:10.1002/pssc.201470041.
^ Monemar, B.; Paskov, P. P.; Kasic, A. (2005-07-01). "Optical properties of InN—the bandgap question". Superlattices and Microstructures. 38 (1): 38–56. Bibcode:2005SuMi...38...38M. doi:10.1016/j.spmi.2005.04.006. ISSN 0749-6036.
^ Goiran, Michel; Millot, Marius; Poumirol, Jean-Marie; Gherasoiu, Iulian; et al. (2010). "Electron cyclotron effective mass in indium nitride". Applied Physics Letters. 96 (5): 052117. Bibcode:2010ApPhL..96e2117G. doi:10.1063/1.3304169.
^ Millot, Marius; Ubrig, Nicolas; Poumirol, Jean-Marie; Gherasoiu, Iulian; et al. (2011). "Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy". Physical Review B. 83 (12): 125204. Bibcode:2011PhRvB..83l5204M. doi:10.1103/PhysRevB.83.125204.
^ Cite error: The named reference inushima was invoked but never defined (see the help page).

[1] Pichugin, I. G.; Tlachala, M. (1978). "Rentgenovsky analiz nitrida indiya" Рентгеновский анализ нитрида индия [X-ray analysis of indium nitride]. Izvestiya Akademii Nauk SSSR: Neorganicheskie Materialy Известия Академии наук СССР: Неорганические материалы (in Russian). 14 (1): 175–176.

[2] Nanishi, Y.; Araki, T.; Yamaguchi, T. (2010). "Molecular-beam epitaxy of InN". In Veal, T. D.; McConville, C. F.; Schaff, W. J. (eds.). Indium Nitride and Related Alloys. CRC Press. p. 31. ISBN 978-1-138-11672-6.

[3] Yim, J. W. L.; Wu, J. (2010). "Optical properties of InN and related alloys". In Veal, T. D.; McConville, C. F.; Schaff, W. J. (eds.). Indium Nitride and Related Alloys. CRC Press. p. 266. ISBN 978-1-138-11672-6.

[4] Christen, Jürgen; Gil, Bernard (2014). "Group III nitrides". Physica Status Solidi C. 11 (2): 238. Bibcode:2014PSSCR..11..238C. doi:10.1002/pssc.201470041.

[5] Monemar, B.; Paskov, P. P.; Kasic, A. (2005-07-01). "Optical properties of InN—the bandgap question". Superlattices and Microstructures. 38 (1): 38–56. Bibcode:2005SuMi...38...38M. doi:10.1016/j.spmi.2005.04.006. ISSN 0749-6036.

[6] Goiran, Michel; Millot, Marius; Poumirol, Jean-Marie; Gherasoiu, Iulian; et al. (2010). "Electron cyclotron effective mass in indium nitride". Applied Physics Letters. 96 (5): 052117. Bibcode:2010ApPhL..96e2117G. doi:10.1063/1.3304169.

[7] Millot, Marius; Ubrig, Nicolas; Poumirol, Jean-Marie; Gherasoiu, Iulian; et al. (2011). "Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy". Physical Review B. 83 (12): 125204. Bibcode:2011PhRvB..83l5204M. doi:10.1103/PhysRevB.83.125204.

[inushima-8] Cite error: The named reference inushima was invoked but never defined (see the help page).

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