Indium gallium arsenide

Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.

The principal importance of GaInAs is its application as a high-speed, high sensitivity photodetector of choice for optical fiber telecommunications.^[1]

^ Pearsall, T. (1980). "Ga_0.47In_0.53As: A ternary semiconductor for photodetector applications". IEEE Journal of Quantum Electronics. 16 (7). Institute of Electrical and Electronics Engineers (IEEE): 709–720. doi:10.1109/jqe.1980.1070557. ISSN 0018-9197.

[pears1-1] Pearsall, T. (1980). "Ga_0.47In_0.53As: A ternary semiconductor for photodetector applications". IEEE Journal of Quantum Electronics. 16 (7). Institute of Electrical and Electronics Engineers (IEEE): 709–720. doi:10.1109/jqe.1980.1070557. ISSN 0018-9197.

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